Nano Express

Nanoscale Research Letters

, 7:503

First online:

Open Access This content is freely available online to anyone, anywhere at any time.

Structural variations of Si1−x C x and their light absorption controllability

  • Jihyun MoonAffiliated withKIER-UNIST Advanced Center for Energy, Korea Institute of Energy ResearchDepartment of Physics, Chungnam National University
  • , Seung Jae BaikAffiliated withDepartment of Electrical, Electronic, and Control Engineering, Hankyong National University Email author 
  • , Byungsung OAffiliated withDepartment of Physics, Chungnam National University
  • , Jeong Chul LeeAffiliated withKIER-UNIST Advanced Center for Energy, Korea Institute of Energy Research Email author 


The emergence of third-generation photovoltaics based on Si relies on tunable bandgap materials with embedded nanocrystalline Si. One of the most promising approaches is based on the mixed-phase Si1 − x C x . We have investigated the light absorption controllability of nanocrystalline Si-embedded Si1 − x C x produced by thermal annealing of the Si-rich Si1 − x C x and composition-modulated superlattice structure. In addition, stoichiometric SiC was also investigated to comparatively analyze the characteristic differences. As a result, it was found that stoichiometric changes of the matrix material and incorporation of oxygen play key roles in light absorption controllability. Based on the results of this work and literature, a design strategy of nanocrystalline Si-embedded absorber materials for third-generation photovoltaics is discussed.


Nanocrystalline Si Solar cell Silicon carbide Light absorption Superlattice PACS 78.20. + e 78.30.Ly 78.40.Fy.