, 7:503,
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Structural variations of Si1−x C x and their light absorption controllability

Abstract

The emergence of third-generation photovoltaics based on Si relies on tunable bandgap materials with embedded nanocrystalline Si. One of the most promising approaches is based on the mixed-phase Si1 − x C x . We have investigated the light absorption controllability of nanocrystalline Si-embedded Si1 − x C x produced by thermal annealing of the Si-rich Si1 − x C x and composition-modulated superlattice structure. In addition, stoichiometric SiC was also investigated to comparatively analyze the characteristic differences. As a result, it was found that stoichiometric changes of the matrix material and incorporation of oxygen play key roles in light absorption controllability. Based on the results of this work and literature, a design strategy of nanocrystalline Si-embedded absorber materials for third-generation photovoltaics is discussed.