Nano Express

Nanoscale Research Letters

, 7:492

First online:

Open Access This content is freely available online to anyone, anywhere at any time.

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

  • Carlos M DuqueAffiliated withInstituto de Física, Universidad de Antioquia
  • , Miguel E Mora-RamosAffiliated withInstituto de Física, Universidad de AntioquiaFacultad de Ciencias, Universidad Autónoma del Estado de Morelos
  • , Carlos A DuqueAffiliated withInstituto de Física, Universidad de Antioquia Email author 


In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail.


Nitrides Excitons Intense laser field Quantum wells