The European Physical Journal D

, Volume 65, Issue 3, pp 421–428

Ordering of SiOxHyCz islands deposited by atmospheric pressure microwave plasma torch on Si(100) substrates patterned by nanoindentation


  • B. Lanfant
  • T. Merle
    • SPCTS, CEC
  • E. Laborde
    • SPCTS, CEC
  • C. Dublanche-Tixier
  • P. Tristant
Regular Article Clusters and Nanostructures

DOI: 10.1140/epjd/e2011-20503-7

Cite this article as:
Landreau, X., Lanfant, B., Merle, T. et al. Eur. Phys. J. D (2011) 65: 421. doi:10.1140/epjd/e2011-20503-7


SiOxHyCz nanometric layers are deposited from hexamethyldisiloxane by atmospheric pressure microwave plasma torch on Si(100) substrates submitted to temperatures varying on the range [0 °C; 120 °C]. Atomic force microscopy (AFM) characterizations of samples grown at intermediate substrate temperatures (~30 °C) demonstrate a layer-by-layer growth (Frank van der Merwe growth) leading to smooth flat and compact films while films deposited at lower and higher substrates temperatures show an island-like growth (Volmer-Weber growth) generating a high surface roughness. Concomitantly, a detailed infrared spectroscopy analysis of the growing films evidences structural modifications due to changes in the bond types, Si-O-Si conformation and stoichiometry correlated with scanning electron microscopy and AFM characterizations. Then, deposition conditions and specific microstructure are selected with the aim of generating 3-dimensional SiOxHyCz nanostructure arrays on nanoindented Si (100) templates. The first results are discussed.

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© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2011