Spin and valley dependent line-type resonant peaks in electrically and magnetically modulated silicene quantum structures

Regular Article

DOI: 10.1140/epjb/e2016-70594-3

Cite this article as:
Zhang, Y. & Guo, Y. Eur. Phys. J. B (2017) 90: 27. doi:10.1140/epjb/e2016-70594-3
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Abstract

A barrier with a tunable spin-valley dependent energy gap in silicene could be used as a spin and valley filter. Meanwhile, special resonant modes in unique quantum structure can act as energy filters. Hence we investigate valley and spin transport properties in the potential silicene quantum structures, i.e., single ferromagnetic barrier, single electromagnetic barrier and double electric barriers. Our quantum transport calculation indicates that quantum devices of high accuracy and efficiency (100% polarization), based on modulated silicene quantum structures, can be designed for valley, spin and energy filtering. These intriguing features are revealed by the spin, valley dependent line-type resonant peaks. In addition, line-type peaks in different structure depend on spin and valley diversely. The filter we proposed is controllable by electric gating.

Keywords

Mesoscopic and Nanoscale Systems

Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2017

Authors and Affiliations

  1. 1.Department of Physics and State Key Laboratory of Low-Dimensional Quantum PhysicsTsinghua UniversityBeijingP.R. China
  2. 2.Collaborative Innovation Center of Quantum MatterBeijingP.R. China