Advances in wide bandgap SiC for optoelectronics

  • Haiyan Ou
  • Yiyu Ou
  • Aikaterini Argyraki
  • Saskia Schimmel
  • Michl Kaiser
  • Peter Wellmann
  • Margareta K. Linnarsson
  • Valdas Jokubavicius
  • Jianwu Sun
  • Rickard Liljedahl
  • Mikael Syväjärvi
Colloquium

DOI: 10.1140/epjb/e2014-41100-0

Cite this article as:
Ou, H., Ou, Y., Argyraki, A. et al. Eur. Phys. J. B (2014) 87: 58. doi:10.1140/epjb/e2014-41100-0

Abstract

Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.

Keywords

Colloquium 

Copyright information

© EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  • Haiyan Ou
    • 1
  • Yiyu Ou
    • 1
  • Aikaterini Argyraki
    • 1
  • Saskia Schimmel
    • 2
  • Michl Kaiser
    • 2
  • Peter Wellmann
    • 2
  • Margareta K. Linnarsson
    • 3
  • Valdas Jokubavicius
    • 4
  • Jianwu Sun
    • 4
  • Rickard Liljedahl
    • 4
  • Mikael Syväjärvi
    • 4
  1. 1.Department of Photonics EngineeringTechnical University of DenmarkLyngbyDenmark
  2. 2.Materials of Electronics Energy TechnologyUniversity of Erlangen-NurembergErlangenGermany
  3. 3.School of Information and Communication TechnologyKTH Royal Institute of TechnologyKistaSweden
  4. 4.Department of Physics, Chemistry and BiologyLinköping UniversityLinköpingSweden
  5. 5.Light extraction ApSLyngbyDenmark
  6. 6.IMECLeuvenBelgium