The European Physical Journal Special Topics

, Volume 148, Issue 1, pp 19–26

Graphene field-effect devices

  • T. J. Echtermeyer
  • M. C. Lemme
  • J. Bolten
  • M. Baus
  • M. Ramsteiner
  • H. Kurz
Article

DOI: 10.1140/epjst/e2007-00222-8

Cite this article as:
Echtermeyer, T., Lemme, M., Bolten, J. et al. Eur. Phys. J. Spec. Top. (2007) 148: 19. doi:10.1140/epjst/e2007-00222-8
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Abstract.

In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices (FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few and monolayer graphene sheets are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The electrical properties of monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors (MOSFETs).

Copyright information

© EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2007

Authors and Affiliations

  • T. J. Echtermeyer
    • 1
  • M. C. Lemme
    • 2
  • J. Bolten
    • 2
  • M. Baus
    • 1
  • M. Ramsteiner
    • 3
  • H. Kurz
    • 1
    • 2
  1. 1.Institute of Semiconductor Electronics, RWTH Aachen UniversityAachenGermany
  2. 2.Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Otto-Blumenthal-Str. 25AachenGermany
  3. 3.Paul-Drude Institute for Solid State ElectronicsBerlinGermany