Ordering of SiOxHyCz islands deposited by atmospheric pressure microwave plasma torch on Si(100) substrates patterned by nanoindentation
Purchase on Springer.com
$39.95 / €34.95 / £29.95 *
* Final gross prices may vary according to local VAT.
SiO x H y C z nanometric layers are deposited from hexamethyldisiloxane by atmospheric pressure microwave plasma torch on Si(100) substrates submitted to temperatures varying on the range [0 °C; 120 °C]. Atomic force microscopy (AFM) characterizations of samples grown at intermediate substrate temperatures (~30 °C) demonstrate a layer-by-layer growth (Frank van der Merwe growth) leading to smooth flat and compact films while films deposited at lower and higher substrates temperatures show an island-like growth (Volmer-Weber growth) generating a high surface roughness. Concomitantly, a detailed infrared spectroscopy analysis of the growing films evidences structural modifications due to changes in the bond types, Si-O-Si conformation and stoichiometry correlated with scanning electron microscopy and AFM characterizations. Then, deposition conditions and specific microstructure are selected with the aim of generating 3-dimensional SiO x H y C z nanostructure arrays on nanoindented Si (100) templates. The first results are discussed.
Supplementary Material (0)
About this Article
- Ordering of SiOxHyCz islands deposited by atmospheric pressure microwave plasma torch on Si(100) substrates patterned by nanoindentation
The European Physical Journal D
Volume 65, Issue 3 , pp 421-428
- Cover Date
- Print ISSN
- Online ISSN
- Additional Links
- Industry Sectors
- Author Affiliations