The European Physical Journal B - Condensed Matter and Complex Systems

, Volume 46, Issue 1, pp 15–19

Optimization of impurity profile for p-n-junction in heterostructures

Solid and Condensed State Physics

DOI: 10.1140/epjb/e2005-00233-1

Cite this article as:
Pankratov, E. & Spagnolo, B. Eur. Phys. J. B (2005) 46: 15. doi:10.1140/epjb/e2005-00233-1


We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.

Copyright information

© EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005

Authors and Affiliations

  1. 1.Institute for Physics of Microstructures of RASNizhny NovgorodRussia
  2. 2.and Dipartimento di Fisica e Tecnologie Relative, Group of Interdisciplinary Physics ( , Università di PalermoINFM-CNRPalermoItaly