Solid and Condensed State Physics

The European Physical Journal B - Condensed Matter and Complex Systems

, Volume 46, Issue 1, pp 15-19

First online:

Optimization of impurity profile for p-n-junction in heterostructures

  • E. L. PankratovAffiliated withInstitute for Physics of Microstructures of RAS Email author 
  • , B. SpagnoloAffiliated withand Dipartimento di Fisica e Tecnologie Relative, Group of Interdisciplinary Physics (http://gip.dft.unipa.it) , Università di Palermo, INFM-CNR

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Abstract.

We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.