Abstract
All-optical cells based on AlGaAs/GaAs/InGaAs laser heterostructures for a 905-nm wavelength have been developed, which operate in the regime of optical-power modulation by means of controlled generation switching between the Fabry–Perot cavity modes and high-Q closed mode. At a modulated power of 1.6 W, a mode-switching time of 1.2 ns and smaller is achieved.
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S. O. Slipchenko, A. A. Podoskin, A. V. Rozhkov, et al., IEEE Photon. Technol. Lett. 27, 307 (2015).
S. O. Slipchenko, A. A. Podoskin, I. S. Shashkin, V. V. Zolotarev, N. A. Pikhtin, and I. S. Tarasov, Semiconductors 48, 686 (2014).
W. F. Kosonocky and R. H. Cornely, in Proceedings of the IEEE Conference on Western Electronic Show and Convention WESCON, Session 16/4 (1968).
S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, and I. S. Tarasov, Laser Phys. 24, 105001 (2014).
S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, Z. N. Sokolova, A. Y. Leshko, and I. S. Tarasov, Semiconductors 45, 663 (2011).
L. A. Coldren, S. W. Corsine, and M. L. Mashanovitch, Diode Lasers and Photonic Integrated Circuits, 2nd ed. (Wiley, Hoboken, NJ, 2012).
A. A. Podoskin, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, and I. S. Tarasov, Semiconductors 49, 1083 (2015).
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Original Russian Text © A.A. Podoskin, I.S. Shashkin, S.O. Slipchenko, N.A. Pikhtin, I.S. Tarasov, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 2, pp. 31–37.
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Podoskin, A.A., Shashkin, I.S., Slipchenko, S.O. et al. All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures. Tech. Phys. Lett. 43, 101–103 (2017). https://doi.org/10.1134/S1063785017010254
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DOI: https://doi.org/10.1134/S1063785017010254