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Resistive switching in metal-insulator-metal structures based on germanium oxide and stabilized zirconia

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Abstract

Bipolar resistive switching in metal-insulator-metal structures based on a double-layer insulator composed of a layer of yttria-stabilized zirconia (YSZ) containing 12 mol % Y2O3 and a layer of GeO x is studied. It is shown that the incorporation of an additional GeO x layer into the structure leads to a significant decrease in the variation of resistive switching parameters at both negative and positive voltages. Au/Zr/GeO x /YSZ/TiN structures exhibit a high stability of the resistance ratio in high-resistance and low-resistance states during cyclic switching. The studied structures can be used for designing next-generation nonvolatile memory elements.

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Authors and Affiliations

  1. Physico-Technical Research Institute, Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod, 603950, Russia

    O. N. Gorshkov, I. N. Antonov, A. I. Belov, A. P. Kasatkin & A. N. Mikhaylov

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  1. O. N. Gorshkov
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  2. I. N. Antonov
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  3. A. I. Belov
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  4. A. P. Kasatkin
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  5. A. N. Mikhaylov
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Correspondence to O. N. Gorshkov.

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Original Russian Text © O.N. Gorshkov, I.N. Antonov, A.I. Belov, A.P. Kasatkin, A.N. Mikhaylov, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 3, pp. 12–19.

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Gorshkov, O.N., Antonov, I.N., Belov, A.I. et al. Resistive switching in metal-insulator-metal structures based on germanium oxide and stabilized zirconia. Tech. Phys. Lett. 40, 101–103 (2014). https://doi.org/10.1134/S1063785014020084

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  • DOI: https://doi.org/10.1134/S1063785014020084

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