Abstract
The influence of the doping level on the effect of the temperature bistability in a silicon wafer upon radiative heat transfer between the wafer and the elements of the heating system is studied. Theoretical transfer characteristics are constructed for a silicon wafer doped with donor and acceptor impurities. These characteristics are compared with the transfer characteristics obtained during heating and cooling of wafers with the hole conduction (with dopant concentrations of 1015, 2 × 1016, and 3 × 1017 cm−3) and electron conduction (with impurity concentrations of 1015 and 8 × 1018 cm−3) in a thermal reactor of the rapid thermal annealing setup. It is found that the width and height of the hysteresis loop decrease with increasing dopant concentration and are almost independent of the type of conduction of the silicon wafer. The critical value of the impurity concentration of both types is 1.4 × 1017 cm−3. For this concentration, the loop width vanishes, and the height corresponds to the minimal value of the temperature jump (∼200 K). The mechanism of temperature bistability in the silicon wafer upon radiative heat transfer is discussed.
Similar content being viewed by others
References
H. Gibbs, Optical Bistability and Hysteresis in Distributed Nonlinear. Systems: Controlling Light with Light (Academic, New York, 1985).
N. N. Rozanov, Optical Bistability and Hysteresis in Distributed Nonlinear Systems (Nauka, Moscow, 1997).
V. I. Rudakov, V. V. Ovcharov, and V. P. Prigara, Tech. Phys. Lett. 34, 718 (2008).
V. I. Rudakov, V. V. Ovcharov, A. L. Kurenya, and V. P. Prigara, Microelectron. Eng. 93, 67 (2012).
V. P. Prigara, V. V. Ovcharov, A. L. Kurenya, and V. I. Rudakov, in Proceedings of the 8th International Conference and 7th School of Young Scientists and Specialists, Moscow, 2011, p. 114.
J.-M. Dilhac and C. Ganibal, Rapid Thermal and Other Shorttime Processing Technologies, Electrochem. Soc. Proc. Ser. (Penington, NJ, 2000), Vol. 2000-9, p. 421.
B. V. Mochalov and V. I. Rudakov, Prib. Tekh. Eksp., No. 2, 155 (1996).
R. Zigel and J. Howell, Thermal Radiation Heat Transfer (CRC, Boca Raton, 2011).
J. Zeegers and H. A. L. van Dijk, Sol. Energy Mater. Sol. Cells 33, 23 (1994).
B. J. Lee and Z. M. Zhang, in Proceedings of the 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, Santa Barbara, 2005, p. 7.
B. J. Lee and Z. M. Zhang, in Proceedings of the 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, Santa Barbara, 2005, p. 10.
V. Joshi, et al., in Proceedings of the Asia and South Pacific Design Automation Conference, Taipei, Taiwan, 2010, pp. 739–744.
F. Cacho, et al., IEEE Trans. Semicond. Manuf. 23, 303 (2011).
E. M. Epshtein, Izv. Vyssh. Uchebn. Zaved., Radiofiz. 15, 33 (1972).
A. N. Magunov, Laser Thermometry of Solids, 2nd ed. (Cambridge Int. Sci. Publ., Cambridge, 2006).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.V. Ovcharov, V.I. Rudakov, V.P. Prigara, A.L. Kurenya, 2014, published in Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 84, No. 8, pp. 67–76.
Rights and permissions
About this article
Cite this article
Ovcharov, V.V., Rudakov, V.I., Prigara, V.P. et al. Effect of the doping level on temperature bistability in a silicon wafer. Tech. Phys. 59, 1171–1179 (2014). https://doi.org/10.1134/S1063784214080167
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063784214080167