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Nanomorphological characteristics of the single-crystal Si(100) surface subjected to microwave plasma processing at weak adsorption

  • Physics of Nanostructures
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Abstract

The influence of the conditions and composition of the highly ionized plasma of an electron cyclotron resonance low-pressure microwave gas discharge on the nanomorphology of the single-crystal Si(100) surface is studied. Model mechanisms of the processes controlling the main nanomorphological parameters of silicon crystals subjected to low-energy microwave plasma processing in chemically active and inactive gaseous media under the conditions of weak adsorption are considered.

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Authors and Affiliations

  1. Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences, ul. Zelenaya 38, Saratov, 410018, Russia

    V. Ya. Shanygin & R. K. Yafarov

Authors
  1. V. Ya. Shanygin
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  2. R. K. Yafarov
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Correspondence to V. Ya. Shanygin.

Additional information

Original Russian Text © V.Ya. Shanygin, R.K. Yafarov, 2013, published in Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 83, No. 4, pp. 92–98.

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Shanygin, V.Y., Yafarov, R.K. Nanomorphological characteristics of the single-crystal Si(100) surface subjected to microwave plasma processing at weak adsorption. Tech. Phys. 58, 557–562 (2013). https://doi.org/10.1134/S1063784213040221

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  • DOI: https://doi.org/10.1134/S1063784213040221

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