Skip to main content
Log in

On the effect of spontaneous polarization on the height of the Schottky barrier at the metal-ferroelectric contact

  • Ferroelectricity
  • Published:
Physics of the Solid State Aims and scope Submit manuscript

Abstract

A comparison of the available concepts on the effect of spontaneous polarization on the height of the Schottky barrier at the metal-ferroelectric contact with the corresponding experimental data has been used as a basis for setting up an alternative model of this phenomenon, which draws on the dependence of the electron work function of a ferroelectric on the magnitude and orientation of the spontaneous polarization vector.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. R. Meyer and H. Kohlstedt, E-print:cond-mat/0312609.

  2. R. Meyer and R. Waser, J. Appl. Phys. 100, 051611 (2006).

    Article  ADS  Google Scholar 

  3. A. Q. Jiang, C. Wang, K. J. Jin, X. B. Liu, J. F. Scott, C. S. Hwang, T. A. Tang, H. B. Lu, and G. Z. Yang, Adv. Mater. (Weinheim) 23, 1277 (2011).

    Article  Google Scholar 

  4. R. Waser and M. Aono, Nat. Mater. 6, 833 (2007).

    Article  ADS  Google Scholar 

  5. P. W. M. Blom, R. M. Wolf, J. F. M. Cillessen, and M. P. C. M. Krijn, Phys. Rev. Lett. 73, 2107 (1994).

    Article  ADS  Google Scholar 

  6. Y. Watanabe, Phys. Rev. B: Condens. Matter 59, 11257 (1999).

    Article  ADS  Google Scholar 

  7. M. Dawber and J. F. Scott, Integr. Ferroelectr. 38, 161 (2001).

    Article  Google Scholar 

  8. T. Choi, S. Lee, Y. J. Choi, V. Kiriuchin, and S.-W. Cheong, Science (Washington) 324, 63 (2009).

    Article  ADS  Google Scholar 

  9. L. Pintilie and M. Alexe, J. Appl. Phys. 98, 124103 (2005).

    Article  ADS  Google Scholar 

  10. E. H. Rhoderick, Metal-Semiconductor Contacts (Clarendon, Oxford, 1978).

    Google Scholar 

  11. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).

    Google Scholar 

  12. A. M. Cowley and S. M. Sze, J. Appl. Phys. 36, 3212 (1965).

    Article  ADS  Google Scholar 

  13. A. K. Tagantsev, A. L. Kholkin, E. L. Colla, K. G. Brooks, and N. Setter, Integr. Ferroelectr. 10, 189 (1995).

    Article  Google Scholar 

  14. T. Murakami, J. Phys. Soc. Jpn. 24, 282 (1968).

    Article  ADS  Google Scholar 

  15. S. Kurtin, T. C. McGill, and C. A. Mead, Phys. Rev. Lett. 22, 1433 (1969).

    Article  ADS  Google Scholar 

  16. N. Barrett, J. Rault, I. Krug, B. Vilquin, G. Niu, B. Gautier, D. Albertini, P. Lecoeur, and O. Renault, Surf. Interface Anal. 42, 1690 (2010).

    Article  Google Scholar 

  17. D. Li, M. H. Zhao, J. Garra, A. M. Kolpak, A. M. Rappe, D. A. Bonnell, and J. M. Vohs, Nat. Mater. 7, 473 (2008).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to V. K. Yarmarkin.

Additional information

Original Russian Text © V.K. Yarmarkin, S.G. Shul’man, V.V. Lemanov, 2013, published in Fizika Tverdogo Tela, 2013, Vol. 55, No. 3, pp. 496–499.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Yarmarkin, V.K., Shul’man, S.G. & Lemanov, V.V. On the effect of spontaneous polarization on the height of the Schottky barrier at the metal-ferroelectric contact. Phys. Solid State 55, 547–550 (2013). https://doi.org/10.1134/S1063783413030323

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063783413030323

Keywords

Navigation