Skip to main content
Log in

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

  • Physics of Semiconductor Devices
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

GaAs/AlGaAs laser structures with InGaAs quantum wells are grown by metal-organic chemical vapor deposition (MOCVD) on exact Si(001) substrates and substrates inclined by 4° to the [011] axis with a relaxed Ge buffer layer, emitting in the transparency region of bulk silicon (the wavelength is longer than 1100 nm at room temperature). The threshold power densities of stimulated emission, observed for the structures grown on exact and inclined substrates are 45 and 37 kW/cm2, respectively.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. D. Liang, A. W. Fang, and J. E. Bowers, Springer Ser. Opt. Sci. 161, 625 (2012).

    Article  Google Scholar 

  2. Y. Chriqui, G. Saint-Girons, S. Bouchoule, J.-M. Moison, G. Isella, H. von Kaenel, and I. Sagnes, Electron. Lett. 39, 1658 (2003).

    Article  Google Scholar 

  3. V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, S. A. Denisov, Z. F. Krasil’nik, K. E. Kudryavtsev, S. A. Matveev, S. M. Nekorkin, and V. G. Shengurov, JETP Lett. 100, 795 (2014).

    Article  ADS  Google Scholar 

  4. J. Wang, X. Ren, C. Deng, H. Hu, Y. He, Z. Cheng, H. Ma, Q. Wang, Y. Huang, X. Duan, and X. Yan, J. Lightwave Technol. 33, 3163 (2015).

    Article  ADS  Google Scholar 

  5. A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, Appl. Phys. Lett. 104, 041104 (2014).

    Article  ADS  Google Scholar 

  6. S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, Nat. Photon. 10, 307 (2016).

    Article  ADS  Google Scholar 

  7. H. Kroemer, K. J. Polasko, and S. C. Wright, Appl. Phys. Lett. 36, 763 (1980).

    Article  ADS  Google Scholar 

  8. K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Németh, B. Kunert, and W. Stolz, J. Cryst. Growth 315, 37 (2011).

    Article  ADS  Google Scholar 

  9. V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, A. G. Fefelov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, I. V. Samartsev, E. V. Skorokhodov, M. V. Shaleev, A. A. Sushkov, A. N. Yablonskiy, P. A. Yunin, and D. V. Yurasov, Appl. Phys. Lett. 109, 061111 (2016).

    Article  ADS  Google Scholar 

  10. A. N. Yablonsky, S. V. Morozov, D. M. Gaponova, V. Ya. Aleshkin, V. G. Shengurov, B. N. Zvonkov, O. V. Vikhrova, N. V. Baidus’, and Z. F. Krasil’nik, Semiconductors 50, 1435 (2016).

    Article  ADS  Google Scholar 

  11. L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. di Gaspare, E. Palange, and F. Evangelisti, Appl. Phys. Lett. 72, 3175 (1998).

    Article  ADS  Google Scholar 

  12. H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, Appl. Phys. Lett. 75, 2909 (1999).

    Article  ADS  Google Scholar 

  13. D. V. Yurasov, A. I. Bobrov, V. M. Daniltsev, A. V. Novikov, D. A. Pavlov, E. V. Skorokhodov, M. V. Shaleev, and P. A. Yunin, Semiconductors 49, 1415 (2015).

    Article  ADS  Google Scholar 

  14. P. V. Volkov, A. V. Goryunov, A. Yu. Luk’yanov, A. D. Tertyshnik, A. V. Novikov, D. V. Yurasov, N. A. Baidakova, N. N. Mikhailov, V. G. Remesnik, and V. D. Kuzmin, Semiconductors 46, 1471 (2012).

    Article  ADS  Google Scholar 

  15. L. Souriau, T. Atanasovac, V. Terzieva, A. Moussa, M. Caymax, R. Loo, M. Meuris, and W. Vandervorst, J. Electrochem. Soc. 155, H677 (2008).

    Article  Google Scholar 

  16. J. M. Hartmann, A. Abbadie, J. P. Barnes, J. M. Fedeli, T. Billon, and L. Vivien, J. Cryst. Growth 312, 532 (2010).

    Article  ADS  Google Scholar 

  17. V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, V. V. Rumyantsev, A. A. Tonkikh, N. D. Zakharov, and B. N. Zvonkov, J. Appl. Phys. 115, 043512 (2014).

    Article  ADS  Google Scholar 

  18. C. K. Chia, J. R. Dong, D. Z. Chi, A. Sridhara, A.S.W. Wong, M. Suryana, G. K. Dalapati, S. J. Chua, and S. J. Lee, Appl. Phys. Lett. 92, 141905 (2008).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to A. A. Dubinov.

Additional information

Original Russian Text © V.Ya. Aleshkin, N.V. Baidus, A.A. Dubinov, Z.F. Krasilnik, S.M. Nekorkin, A.V. Novikov, A.V. Rykov, D.V. Yurasov, A.N. Yablonskiy, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 5, pp. 695–698.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Aleshkin, V.Y., Baidus, N.V., Dubinov, A.A. et al. On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates. Semiconductors 51, 663–666 (2017). https://doi.org/10.1134/S1063782617050037

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782617050037

Navigation