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Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Indium-antimonide quantum dots (7–9 × 109 cm2) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of T = 440°C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.

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References

  1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1999).

    Google Scholar 

  2. B. J. Spencer and J. Tersoff, Phys. Rev. B 63, 205424 (2001).

    Article  ADS  Google Scholar 

  3. K. D. Moiseev, Ya. A. Parkhomenko, E. V. Gushchina, A. V. Ankudinov, M. P. Mikhailova, N. A. Bert, and Yu. P. Yakovlev, Semiconductors 43, 1102 (2009).

    Article  ADS  Google Scholar 

  4. N. A. Bert, V. N. Nevedomsky, P. A. Dement’ev, and K. D. Moiseev, Appl. Surf. Sci. 267, 77 (2013).

    Article  ADS  Google Scholar 

  5. K. Moiseev, P. Dement’ev, V. Romanov, and M. Mikhailova, J. Cryst. Growth 318, 379 (2011).

    Article  ADS  Google Scholar 

  6. K. D. Moiseev, Ya. A. Parkhomenko, and V. N. Nevedomsky, Thin Solid Films 543, 74 (2013).

    Article  ADS  Google Scholar 

  7. V. V. Romanov, P. A. Dement’ev, and K. D. Moiseev, Semiconductors 47, 443 (2013).

    Article  ADS  Google Scholar 

  8. V. V. Romanov, M. V. Baidakova, and K. D. Moiseev, Semiconductors 48, 733 (2014).

    Article  ADS  Google Scholar 

  9. H. Eisele, A. Lenz, R. Heitz, R. Timm, M. Dähne, Y. Temko, T. Suzuki, and K. Jacobi, J. Appl. Phys. 104, 124301 (2008).

    Article  ADS  Google Scholar 

  10. P. Kratzer, Q. Liu, P. Acosta-Diaz, C. Manzano, G. Costantini, R. Songmuang, A. Rastelli, O. G. Schmidt, and K. Kern, Phys. Rev. B 73, 205347 (2006).

    Article  ADS  Google Scholar 

  11. J. C. Ferrer, F. Peiro, A. Cornet, J. R. Morante, T. Uztmeier, G. Armelles, and F. Briones, Appl. Phys. Lett. 69, 3887 (1996).

    Article  ADS  Google Scholar 

  12. X. Zhang, A. E. Staton-Bevan, D. W. Pashley, S. D. Parker, R. Droopad, R. L. Williams, and R. C. Newman, J. Appl. Phys. 67, 800 (1990).

    Article  ADS  Google Scholar 

  13. A. N. Baranov, A. M. Litvak, K. D. Moiseev, N. A. Charykov, V. V. Sherstnev, and Yu. P. Yakovlev, Zh. Prikl. Khim. 63, 976 (1990).

    Google Scholar 

  14. T. I. Voronina, T. S. Lagunova, K. D. Moiseev, M. A. Sipovskaya, I. N. Timchenko, and Yu. P. Yakovlev, Semiconductors 27, 978 (1993).

    ADS  Google Scholar 

  15. A. M. Litvak, K. D. Moiseev, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev, Zh. Prikl. Khim. 67, 1957 (1994).

    Google Scholar 

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Authors and Affiliations

  1. Ioffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. V. Romanov, P. A. Dement’ev & K. D. Moiseev

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  1. V. V. Romanov
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  2. P. A. Dement’ev
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  3. K. D. Moiseev
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Correspondence to K. D. Moiseev.

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Original Russian Text © V.V. Romanov, P.A. Dement’ev, K.D. Moiseev, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 7, pp. 927–931.

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Romanov, V.V., Dement’ev, P.A. & Moiseev, K.D. Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth. Semiconductors 50, 910–914 (2016). https://doi.org/10.1134/S1063782616070216

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  • DOI: https://doi.org/10.1134/S1063782616070216

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