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Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

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Abstract

The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are coherently conjugated with the substrate with the formation of misfit dislocations, as in the case of a layer on a singular substrate. Atomic steps on the substrate surface are visualized, and their influence on the growth of aluminum crystal grains is discussed.

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Authors and Affiliations

  1. National Research University of Electronic Technology “MIET”, Zelenograd, Moscow, 124498, Russia

    M. V. Lovygin & N. I. Borgardt

  2. IV Physikalisches Institut, Universität Göttingen, Göttingen, D-37073, Germany

    M. Seibt

  3. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991, Russia

    I. P. Kazakov & A. V. Tsikunov

Authors
  1. M. V. Lovygin
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  2. N. I. Borgardt
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  3. M. Seibt
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  4. I. P. Kazakov
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  5. A. V. Tsikunov
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Correspondence to M. V. Lovygin.

Additional information

Original Russian Text © M.V. Lovygin, N.I. Borgardt, M. Seibt, I.P. Kazakov, A.V. Tsikunov, 2015, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika, 2015, Vol. 20, No. 1, pp. 10–16.

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Lovygin, M.V., Borgardt, N.I., Seibt, M. et al. Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy. Semiconductors 49, 1714–1717 (2015). https://doi.org/10.1134/S1063782615130102

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  • DOI: https://doi.org/10.1134/S1063782615130102

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