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On the size distribution in three-dimensional quantum-dot crystals

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The size distribution function of nanodots in artificial three-dimensional (Si)Ge/Si and In(Ga)As/GaAs quantum dot crystals grown using templates with perfect periodicity is calculated. Pyramidal nanodots were modeled by cone-shaped clusters for which the Thomson formula was derived, which is necessary to determine the growth (dissolution) rate of clusters during Ostwald ripening. A comparison of the calculated curve with experimental histograms shows that the size distribution itself is formed during Ostwald ripening and is caused by features of Ge and InAs quantum-dot formation on preliminarily textured Si and GaAs substrates.

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Authors and Affiliations

  1. Fed’kovich Chernivtsi National University, ul. Kotsyubinskogo 2, Chernivtsi, 58012, Ukraine

    R. D. Vengrenovich, B. V. Ivanskii, M. O. Stasyk & I. I. Panko

Authors
  1. R. D. Vengrenovich
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  2. B. V. Ivanskii
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  3. M. O. Stasyk
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  4. I. I. Panko
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Correspondence to R. D. Vengrenovich.

Additional information

Original Russian Text © R.D. Vengrenovich, B.V. Ivanskii, M.O. Stasyk, I.I. Panko, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 6, pp. 805–813.

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Vengrenovich, R.D., Ivanskii, B.V., Stasyk, M.O. et al. On the size distribution in three-dimensional quantum-dot crystals. Semiconductors 48, 783–791 (2014). https://doi.org/10.1134/S1063782614060256

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  • DOI: https://doi.org/10.1134/S1063782614060256

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