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Electrical properties of MOS diodes In/TiO2/p-CdTe

  • Physics of Semiconductor Devices
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Abstract

In/TiO2/p-CdTe MOS diodes, which have a rectification coefficient of K = 6 × 103 at an external bias of 2 V, are fabricated for the first time by means of the inexpensive spray-pyrolysis method. It is established that tunnel-recombination processes in the MOS structures under investigation for forward and reverse voltages with the participation of levels at an energy depth of 0.25 eV are the dominant current-flow mechanism. The features of the voltage-capacitance characteristics of In/TiO2/p-CdTe MOS diodes testify to a sharp decrease in the resistance of the TiO2 high-resistance layer at forward bias, which is caused by the relation between the energy parameters of components of the MOS structure under investigation.

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Authors and Affiliations

  1. Yuriy Fedkovych Chernivtsi National University, Chernivtsi, 58012, Ukraine

    V. V. Brus, M. I. Ilashchuk, I. G. Orletsky, P. D. Maryanchuk & K. S. Ulyanytskiy

  2. Helmholtz-Zentrum Berlin für Materialien und Energie, D-12489, Berlin, Germany

    V. V. Brus

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  1. V. V. Brus
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  2. M. I. Ilashchuk
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  3. I. G. Orletsky
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  4. P. D. Maryanchuk
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  5. K. S. Ulyanytskiy
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Correspondence to V. V. Brus.

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Original Russian Text © V.V. Brus, M.I. Ilashchuk, I.G. Orletsky, P.D. Maryanchuk, K.S. Ulyanytskiy, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 4, pp. 504–508.

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Brus, V.V., Ilashchuk, M.I., Orletsky, I.G. et al. Electrical properties of MOS diodes In/TiO2/p-CdTe. Semiconductors 48, 487–491 (2014). https://doi.org/10.1134/S1063782614040071

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  • DOI: https://doi.org/10.1134/S1063782614040071

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