Abstract
The I–V characteristics of nanostructured Pd films on a Si substrate are investigated. The nanostructures (nanoislands) are formed by the vacuum annealing of continuous ultrathin Pd films sputtered onto a substrate. The shape of the I–V characteristics of the investigated Si substrate-Pd film system is shown to be heavily dependent on the degree of film nanostructuring. The surface morphology of the films is studied using scanning electron microscopy.
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K. T. Ho, C.-D. Lien, and M.-A. Nicolet, J. Appl. Phys. 57, 232 (1985).
Risa Suryana, Osamu Nakatsuka, and Shigeaki Zaima, Jpn J. Appl. Phys. 50, 05EA09–1 (2011).
L. P. Anufriev, V. V. Baranov, Ya. A. Solov’ev, and M. V. Tarasikov, Tekhnol. Konstruir. Elektron. Appar. 4, 55 (2005).
S. V. Tomilin and A. S. Yanovsky, J. Nano Electron. Phys. 4, 01013 (2012).
V. B. Loboda and S. N. Khursenko, J. Exp. Theor. Phys. 103, 790 (2006).
L. P. Pavlov, Measurements of the Parameters of Semiconductor Materials (Vyssh. Shkola, Moscow, 1987), ch. 1.5 [in Russian].
HandBook of Thin Film Technology, Ed. by L. Meisel and R. Glang (McGraw-Hill, New York, 1970; Sov. Radio, Moscow, 1977), Vol. 1, p. 664.
K. V. Shalimova, Physics of Semiconductors (Energiya, Moscow, 1976), ch. 10, p. 276 [in Russian].
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Original Russian Text © S.V. Tomilin, A.S. Yanovsky, O.A. Tomilina, G.R. Mikaelyan, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 6, pp. 772–776.
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Tomilin, S.V., Yanovsky, A.S., Tomilina, O.A. et al. Study of the I–V characteristics of nanostructured Pd films on a Si substrate after vacuum annealing. Semiconductors 47, 782–786 (2013). https://doi.org/10.1134/S1063782613060286
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DOI: https://doi.org/10.1134/S1063782613060286