Abstract
The possibility of developing injection photodiodes with a tunable/reconfigurable? photosensitivity spectrum in the spectral range of 500–800 nm based on an n-CdS/p-CdTe heterostructure is shown. It is established that such a structure in the short-wavelength region λ = 500 nm has the highest spectral sensitivity S λ ≈ 3 A/W in the forward direction at a bias voltage of V = +120 mV and S λ ≈ 2 A/W in the reverse direction at a bias voltage of V = −120 mV. The integrated sensitivity of the device is S int = 2 400 A/lm under illumination with white light E = 3 × 10−2 lx, at a bias voltage of V = +4.6 V, and temperature of T = 293 K. Upon illumination with the monochromatic light of an LG-75 laser with the wavelength λ = 625 nm, S int = −1400 A/W (illumination power P = 18 × 10−6 W/cm2, bias voltage V = +4.6 V, and temperature T = 293 K). High values of S λ and S int provide the highly efficient transformation of light energy into electrical energy at low illumination levels (P < 18 × 10−6 W/cm2).
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Original Russian Text © Sh.A. Mirsagatov, R.R. Kabulov, M.A. Makhmudov, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 6, pp. 815–820.
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Mirsagatov, S.A., Kabulov, R.R. & Makhmudov, M.A. Injection photodiode based on an n-CdS/p-CdTe heterostructure. Semiconductors 47, 825–830 (2013). https://doi.org/10.1134/S106378261306016X
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DOI: https://doi.org/10.1134/S106378261306016X