Abstract
The dependences of the differential capacitance and current of a p +-n junction with a uniformly doped n region on the voltage in the junction region are calculated. The p +-n junction capacitance controls the charge change in the junction region taking into account a change in the electric field of the quasi-neutral n region and a change in its bipolar drift mobility with increasing excess charge-carrier concentration. It is shown that the change in the sign of the p +-n junction capacitance with increasing injection level is caused by a decrease in the bipolar drift mobility as the electron-hole pair concentration in the n region increases. It is shown that the p +-n junction capacitance decreases with increasing reverse voltage and tends to a constant positive value.
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Original Russian Text © N.A. Shekhovtsov, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 4, pp. 521–531.
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Shekhovtsov, N.A. Voltage dependence of the differential capacitance of a p +-n junction. Semiconductors 47, 543–554 (2013). https://doi.org/10.1134/S1063782613040209
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DOI: https://doi.org/10.1134/S1063782613040209