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Resonance Coulomb scattering at shallow donors in AlGaAs/n-GaAs/AlGaAs quantum wells

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The characteristics of the Coulomb scattering of conduction electrons at shallow donor centers in Al x Ga1 − x As/n-GaAs/Al x Ga1 − x As quantum well heterostructures are studied theoretically with consideration for the influence of resonance states. The resonance states emerge below the excited quantum-confinement subbands because of the presence of donors. It is found that the spectra of total and transport Coulomb-scattering cross sections exhibit asymmetric resonance features in the vicinity of resonance energies. It is shown that these features do not exhibit a small effect: in the vicinity of resonance energies, the cross sections can differ from the corresponding quantities in the nonresonance case several times.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    V. Ya. Aleshkin & D. I. Burdeiny

Authors
  1. V. Ya. Aleshkin
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  2. D. I. Burdeiny
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Correspondence to D. I. Burdeiny.

Additional information

Original Russian Text © V.Ya. Aleshkin, D.I. Burdeiny, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 4, pp. 466–472.

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Aleshkin, V.Y., Burdeiny, D.I. Resonance Coulomb scattering at shallow donors in AlGaAs/n-GaAs/AlGaAs quantum wells. Semiconductors 47, 487–493 (2013). https://doi.org/10.1134/S1063782613040027

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  • DOI: https://doi.org/10.1134/S1063782613040027

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