Skip to main content
SpringerLink
Log in

Features of the performance of a transient voltage suppressor in the pulsed mode

  • Physics of Semiconductor Devices
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

It is experimentally shown that the pulse withstand capacity of transient voltage suppressors, independent of power rating, decreases by the same law with increasing pulse duration, which indicates their optimum design parameters. The interrelation between transition times (turned on and off) and the characteristic parameters of the transient voltage suppressor structure is shown. The possibility of emitting a power fraction at the resonance frequency is an additional stimulus to increasing the withstand power.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. I. Belous, A. V. Silin, and V. N. Ponomar’, Circuitry of Bipolar Microschemes for High-Performance Systems of Information Processing (Tarpei, Minsk, 1998), p. 154 [in Russian].

    Google Scholar 

  2. A. Belous, V. Solodukha, V. Sokol, and V. Syakerskii, Elektron. Kompon. 9, 50 (2009). http://www.elcompjournal.ru

    Google Scholar 

  3. F. P. Korshunov, Yu. V. Bogatyrev, S. B. Lastovskii, V. I. Kul’gachev, L. P. Anufriev, I. I. Rubtsevich, V. V. Glukhmanchuk, and N. F. Golubev, Fiz. Tverd. Tela 47, 419 (2005).

    Google Scholar 

  4. A. F. Muratov, A. Z. Rakhmatov, A. A. Merkulov, and I. R. Ismoilov, Patent RUz No. 5328, Byull. No. 3 (1994).

    Google Scholar 

  5. A. Farenburkh and R. Bube, Fundamentals of Solar Cells: Photovoltaic Solar Energy Conversion (Academic, New York, 1983; Energoatomizdat, Moscow, 1987).

    Google Scholar 

  6. V. A. Kozlov, A. F. Kardo-Sysoev, and V. I. Brylevskii, Semiconductors 35, 608 (2001).

    Article  ADS  Google Scholar 

  7. S. Skornyakov, V. Pavlov, and A. Rakhmatov, Kompon. Tekhnol. 3, 70 (2008).

    Google Scholar 

  8. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley-Interscience, Hoboken, NJ, 2007), 3rd ed., p. 447.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Physical-Technical Institute, “Physics-Sun” Scientific Association, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100084, Uzbekistan

    O. A. Abdulkhaev, A. V. Karimov & D. M. Yodgorova

  2. “Foton” Joint-stock Company, Tashkent, 1000084, Uzbekistan

    A. Z. Rahmatov

Authors
  1. A. Z. Rahmatov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. O. A. Abdulkhaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. V. Karimov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. D. M. Yodgorova
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. V. Karimov.

Additional information

Original Russian Text © A.Z. Rahmatov, O.A. Abdulkhaev, A.V. Karimov, D.M. Yodgorova, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 3, pp. 364–368.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Rahmatov, A.Z., Abdulkhaev, O.A., Karimov, A.V. et al. Features of the performance of a transient voltage suppressor in the pulsed mode. Semiconductors 47, 387–391 (2013). https://doi.org/10.1134/S1063782613030202

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782613030202

Keywords

Search

Navigation