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Transformation of the plasmon spectrum in a grating-gate transistor structure with spatially modulated two-dimensional electron channel

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Abstract

We present the theory of plasmon excitation in a grating-gate transistor structure with spatially modulated 2D electron channel. The plasmon spectrum varies depending on the electron density modulation in the transistor channel. We report on the frequency ranges of plasmon mode excitation in the gated and ungated regions of the channel and on the interaction of these different types of plasmon modes. We show that a constructive influence of the ungated regions of the electron channel considerably increases the intensity of the gated plasmon resonances and reduces the plasmon-resonance linewidth in the grating-gated transistor structure.

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Authors and Affiliations

  1. Kotelnikov Institute of Radio Engineering and Electronics of RAS (Saratov Branch), Saratov, 410019, Russia

    D. V. Fateev & V. V. Popov

  2. Department of Electrical, Computer, and System Engineering and Center for Integrated Electronics, CII9015, Rensselaer Polytechnic Institute, Troy, New York, 12180, USA

    M. S. Shur

Authors
  1. D. V. Fateev
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  2. V. V. Popov
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  3. M. S. Shur
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Correspondence to D. V. Fateev.

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Original Russian Text © D.V. Fateev, V.V. Popov, M.S. Shur, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 11, pp. 1455–1462.

The article was translated by the authors.

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Fateev, D.V., Popov, V.V. & Shur, M.S. Transformation of the plasmon spectrum in a grating-gate transistor structure with spatially modulated two-dimensional electron channel. Semiconductors 44, 1406–1413 (2010). https://doi.org/10.1134/S1063782610110059

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  • DOI: https://doi.org/10.1134/S1063782610110059

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