Abstract
The characteristics of the high-frequency response of single- and double-well resonant tunneling structures in a dc electric field are investigated on the basis of the numerical solution of a time-dependent Schrödinger equation with open boundary conditions. The frequency dependence of the real part of high frequency conductivity (high-frequency response) in In0.53Ga0.47As/AlAs/InP structures is analyzed in detail for various values of the dc voltage V dc in the negative differential resistance (NDR) region. It is shown that double-well three-barrier structures are promising for the design of terahertz-band oscillators. The presence of two resonant states with close energies in such structures leads to a resonant (in frequency) response whose frequency is determined by the energy difference between these levels and can be controlled by varying the parameters of the structure. It is shown that, in principle, such structures admit narrow-band amplification, tuning of the amplification frequency, and a fine control of the amplification (oscillation) frequency in a wide range of terahertz frequencies by varying a dc electric voltage applied to the structure. Starting from a certain width of the central intermediate barrier in double-well structures, one can observe a collapse of resonances, where the structure behaves like a single-well system. This phenomenon imposes a lower limit on the oscillation frequency in three-barrier resonant tunneling structures.
Similar content being viewed by others
References
T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald, C. D. Parker, and D. D. Peck, Appl. Phys. Lett. 43, 588 (1983).
E. R. Brown, J. R. Söderström, C. D. Parker, L. J. Mahoney, K. M. Molvar, and T. C. McGill, Appl. Phys. Lett. 58, 2291 (1991).
N. Orihashi, S. Suzuki, and M. Asada, Appl. Phys. Lett. 87, 233501 (2005).
S. Suzuki, A. Teranishi, K. Hinata, M. Asada, H. Sugiyama, and H. Yokoyama, Appl. Phys. Express 2, 054501 (2009).
S. Suzuki, M. Asada, A. Teranishi, H. Sugiyama, and H. Yokoyama, Appl. Phys. Lett. 97, 242102 (2010).
R. Sekiguchi, Y. Koyama, and T. Ouchi, Appl. Phys. Lett. 96, 062115 (2010).
M. Feiginov, C. Sydlo, O. Cojocari, and P. Meissner, Appl. Phys. Lett. 99, 233506 (2011).
A. A. Gorbatsevich and V. M. Koltyzhenkov, in Proceedings of the International Workshop on Physics and Computer Modeling of Devices Based on Low-Dimensional Structures, Aizu-Wakamatsu, Japan, November 7–9, 1995 (IEEE Computer Society Press, Los Alamitos, California, United States, 1996), p. 68.
A. Gorbatsevich, I. Kazakov, B. Nalbandov, S. Shmelev, and A. Tsibizov, in Proceedings of International Conference “Micro- and Nanoelectronics 2003” (ICMNE-2003), Zvenigorod, Moscow oblast, October 1–5, 2003 (Zvenigorod, 2003), p. 63.
M. Reddy, S. C. Martin, A. C. Molnar, R. E. Muller, R. P. Smith, P. H. Siegel, M. J. Mondry, M. J. W. Rodwell, H. Kroemer, and S. J. Allen, Jr., IEEE Electron Device Lett. 18, 218 (1997).
Haitao Qi, Weilian Guo, Yali Li, Xiongwen Zhang, and Xiaobai Li, Trans. Tianjin Univ. 16, 267 (2010).
V. N. Murzin and Yu. V. Kopaev, in Proceedings of the GDRI-CNRS Workshop “Semiconductors Sourses and Detectors of THz Radiation,” Tignes, France, March 29–April 1, 2011 (Tignes, 2011), p. 5.
V. F. Elesin, JETP 89(2), 377 (1999).
V. F. Elesin, JETP 94(4), 794 (2002).
V. F. Elesin, JETP 97(2), 343 (2003).
V. A. Chuenkov, Kratk. Soobshch. Fiz., No. 10, 21 (2008).
V. F. Elesin, JETP 100(1), 116 (2005).
S. A. Savinov and V. N. Murzin, JETP Lett. 93(3), 155 (2011).
R. K. Mains and G. I. Haddad, J. Appl. Phys. 67, 591 (1990).
J. R. Hellums and W. R. Frensley, Phys. Rev. B: Condens. Matter 49, 2904 (1994).
W. Li and L. E. Reichl, Phys. Rev. B: Condens. Matter 60, 15732 (1999).
W. Li and L. E. Reichl, Phys. Rev. B: Condens. Matter 62, 8269 (2000).
G. Murillo, P. A. Schulz, and J. C. Arce, Appl. Phys. Lett. 98, 102108 (2011).
A. N. Tikhonov and A. A. Samarskii, Equations of Mathematical Physics (Nauka, Moscow, 1972; Dover, New York, 1990).
A. A. Gorbatsevich, M. N. Zhuravlev, and V. V. Kapaev, JETP 107(2), 288 (2008).
A. A. Gorbatsevich, M. N. Zhuravlev, and V. V. Kapaev, Izv. Vyssh. Uchebn. Zaved., Elektron., No. 2, 3 (2008).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.V. Kapaev, Yu.V. Kopaev, S.A. Savinov, V.N. Murzin, 2013, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2013, Vol. 143, No. 3, pp. 569–589.
Rights and permissions
About this article
Cite this article
Kapaev, V.V., Kopaev, Y.V., Savinov, S.A. et al. High-frequency response and the possibilities of frequency-tunable narrow-band terahertz amplification in resonant tunneling nanostructures. J. Exp. Theor. Phys. 116, 497–515 (2013). https://doi.org/10.1134/S1063776113030096
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063776113030096