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Accumulated distribution of material gain at dislocation crystal growth

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Abstract

A model for slowing down the tangential growth rate of an elementary step at dislocation crystal growth is proposed based on the exponential law of impurity particle distribution over adsorption energy. It is established that the statistical distribution of material gain on structurally equivalent faces obeys the Erlang law. The Erlang distribution is proposed to be used to calculate the occurrence rates of morphological combinatorial types of polyhedra, presenting real simple crystallographic forms.

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Authors and Affiliations

  1. Institute of Geology, Komi Science Center, Ural Branch, Russian Academy of Sciences, ul. Pervomaiskaya 54, Syktyvkar, 167982, Russia

    V. I. Rakin

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  1. V. I. Rakin
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Correspondence to V. I. Rakin.

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Original Russian Text © V.I. Rakin, 2016, published in Kristallografiya, 2016, Vol. 61, No. 3, pp. 488–494.

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Rakin, V.I. Accumulated distribution of material gain at dislocation crystal growth. Crystallogr. Rep. 61, 517–522 (2016). https://doi.org/10.1134/S1063774516020152

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  • DOI: https://doi.org/10.1134/S1063774516020152

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