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Optimization of the crystallization rate in growing Bi4Ge3O12 crystals by the LTG CZ technique

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Abstract

The influence of the growth rate on the shaping and quality of Bi4Ge3O12 (BGO) crystals during their growth by the low-thermal-gradient Czochralski technique has been studied. Several series of BGO crystals have been grown with the rate varying from 0.3 to 15 mm/h. The limited growing rates at which the crystal quality is not deteriorated are established. The results of the study make it possible to increase the growth rate in commercial systems by a factor of 1.5–2 and thus significantly increase the growth efficiency.

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Authors and Affiliations

  1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Akademila Lavrent’eva 3, Novosibirsk, 630090, Russia

    N. V. Ivannikova, V. N. Shlegel & Ya. V. Vasiliev

Authors
  1. N. V. Ivannikova
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  2. V. N. Shlegel
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  3. Ya. V. Vasiliev
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Corresponding author

Correspondence to N. V. Ivannikova.

Additional information

Original Russian Text © N.V. Ivannikova, V.N. Shlegel, Ya.V. Vasiliev, 2014, published in Kristallografiya, 2014, Vol. 59, No. 4, pp. 676–680.

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Ivannikova, N.V., Shlegel, V.N. & Vasiliev, Y.V. Optimization of the crystallization rate in growing Bi4Ge3O12 crystals by the LTG CZ technique. Crystallogr. Rep. 59, 612–615 (2014). https://doi.org/10.1134/S1063774514040075

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  • DOI: https://doi.org/10.1134/S1063774514040075

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