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Relaxation modification of the morphology of atomically clean silicon (100) crystal surfaces after treatment with SHF plasma

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Abstract

Relaxation modification of the nanomorphology of atomically clean surfaces of silicon (100) crystals with different conductivity types, obtained using low-energy low-pressure SHF plasma, was studied. The influence of the chemical activity of the working gases used on the character and kinetics of postprocess changes in the nanomorhpology was revealed. It was shown that the type of the kinetic dependences is defined by the semiconductor type; the minimal surface energy and a better quality of the interface structure appear after the low-energy SHF plasma treatment in an argon atmosphere.

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Authors and Affiliations

  1. Saratov Branch, Kotel’nikov Institute for Radio Engineering and Electronics, Russian Academy of Sciences, ul. Zelenaya 38, Saratov, 410019, Russia

    R. K. Yafarov

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  1. R. K. Yafarov
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Correspondence to R. K. Yafarov.

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Original Russian Text © R.K. Yafarov, 2016, published in Mikroelektronika, 2016, Vol. 45, No. 4, pp. 273–279.

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Yafarov, R.K. Relaxation modification of the morphology of atomically clean silicon (100) crystal surfaces after treatment with SHF plasma. Russ Microelectron 45, 256–261 (2016). https://doi.org/10.1134/S1063739716040120

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  • DOI: https://doi.org/10.1134/S1063739716040120

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