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Atomic mechanisms of strain relaxation in heteroepitaxial Cu/Ni(001) system

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Abstract

Strain relief mechanisms in heteroepitaxial Cu/Ni(001) system are studied using molecular static methods with semiempirical EAM potentials. In particular, the process of a V-shape defect (internal (111) faceting) nucleation is considered, and the corresponding activation barriers and critical thicknesses are estimated.

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Authors and Affiliations

  1. Institute of Physics and Technology, Yaroslavl Branch, Academy of Sciences of Russia, Yaroslavl, 150007, Russia

    O. S. Trushin & A. N. Kupryanov

  2. Department of Physics, Brown University, P.O. Box 1843, Providence, Rhode Island, 02912-1843, USA

    S. -C. Ying

  3. Laboratório Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, 12227-010, São José dos Campos, SP, Brazil

    E. Granato

  4. COMP CoE at the Department of Applied Physics, Aalto University School of Science, P.O. Box 10000, FIN-00076, Aalto, Espoo, Finland

    T. Ala-Nissila

Authors
  1. O. S. Trushin
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  2. A. N. Kupryanov
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  3. S. -C. Ying
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  4. E. Granato
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  5. T. Ala-Nissila
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Corresponding author

Correspondence to O. S. Trushin.

Additional information

Original Russian Text © O.S. Trushin, A.N. Kupryanov, S.-C. Ying, E. Granato, T. Ala-Nissila, 2015, published in Mikroelektronika, 2015, Vol. 44, No. 6, pp. 459–463.

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Trushin, O.S., Kupryanov, A.N., Ying, S.C. et al. Atomic mechanisms of strain relaxation in heteroepitaxial Cu/Ni(001) system. Russ Microelectron 44, 410–413 (2015). https://doi.org/10.1134/S1063739715060086

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  • DOI: https://doi.org/10.1134/S1063739715060086

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