Abstract
The requirements are formulated to be fulfilled by magnetic granular structures that have the giant magnetoresistance (GMR) in semiconductor-ferromagnet systems. AIIBIVC V2 -Mn(CV), AIIICV-Mn(CV), and A II3 C V2 -Mn(CV) semiconductor-ferromagnet systems are shown to be eutectic systems and to be promising for the preparation of granular structures with high magnetoresistance values. Magnetic granular structures have been prepared in Zn(Cd)GeAs2-MnP(As), Zn(Cd)3P(As)2-MnP(As), and (Al,Ga,In)Sb-MnSb systems and the origin of magnetoresistance in these systems is shown to be due to the structure of Mn(CV) ferromagnet clusters.
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Original Russian Text © S.F. Marenkin, A.D. Izotov, I.V. Fedorchenko, V.M. Novotortsev, 2015, published in Zhurnal Neorganicheskoi Khimii, 2015, Vol. 60, No. 3, pp. 343–348.
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Marenkin, S.F., Izotov, A.D., Fedorchenko, I.V. et al. Manufacture of magnetic granular structures in semiconductor-ferromagnet systems. Russ. J. Inorg. Chem. 60, 295–300 (2015). https://doi.org/10.1134/S0036023615030146
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DOI: https://doi.org/10.1134/S0036023615030146