Abstract
A scheme for the implementation of the Toffoli gate in inorganic crystals doped by rare-earth metal ions is proposed. A numerical analysis of the factors affecting the fidelity of the Toffoli gate implementation is carried out, and estimates for the available experimental parameters are obtained. A demonstration experiment is set up in which behavior similar to the Toffoli gate is shown for ensembles of Pr3+ ions doped into a LaF3 crystal.
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Original Russian Text © R.A. Akhmedzhanov, L.A. Gushchin, I.V. Zelensky, Yu.P. Malakyan, D.A. Sobgaida, 2015, published in Optika i Spektroskopiya, 2015, Vol. 119, No. 1, pp. 102–106.
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Akhmedzhanov, R.A., Gushchin, L.A., Zelensky, I.V. et al. Demonstrating the possibility of implementing the Toffoli gate in crystals doped by rare-earth metal ions. Opt. Spectrosc. 119, 98–102 (2015). https://doi.org/10.1134/S0030400X15070024
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DOI: https://doi.org/10.1134/S0030400X15070024