Abstract
We propose a semiconductor structure that can switch the electron spin using the interplay between the Rashba effect and the geometry of the system. In detail, the structure consists of a strongly curved one-dimensional ballistic wire with intrinsic spin-orbit interactions. Here, in contrast to the previous proposals based on straight quantum channels, the spin switching is achievable even if the electrons are in the eigen state and the spin precession does not occur. Using the parameters relevant for InAs, we investigate the tunability of this effect by means of external electric and magnetic fields.
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The text was submitted by the authors in English.