Skip to main content
SpringerLink
Log in

Growth of planar silicon whiskers via temperature gradient driven melt droplet migration

  • Published:
Inorganic Materials Aims and scope

Abstract

Based on studies of the thermal migration of metal-silicon melt droplets over the surface of a silicon wafer in a longitudinal temperature gradient, we have proposed an approach for growing planar Si whiskers (directed in the plane of their substrate). Using this approach, we have produced planar Si whiskers with an aspect (length to radius) ratio in the range 4–10.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Patolsky, E., Zheng, G., Hayden, O., et al., Electrical detection of single viruses, Proc. Natl. Acad. Sci. U. S. A., 2004, vol. 101, pp. 14017–14022.

    Article  CAS  Google Scholar 

  2. Patolsky, F., Zheng, G.F., and Lieber, C.M., Fabrication of silicon nanowire devices for ultrasensitive, labelfree, real-time detection of biological and chemical species, Anal. Chem., 2006, vol. 78, pp. 4260–4263.

    Article  CAS  Google Scholar 

  3. Hayden, O., Zheng, G.F., et al., Visualization of carrier depletion in semiconducting nanowires, Small, 2007, vol. 3, pp. 2048–2052.

    Article  CAS  Google Scholar 

  4. Patolsky, F., Zheng, G.C., et al., Nanowire sensors for medicine and the life sciences, Nanomedicine, 2006, vol. 1, pp. 51–65.

    Article  CAS  Google Scholar 

  5. Nebol’sin, V.A. and Shchetinin, A.A., Mechanism of quasi-one-dimensional vapor phase growth of Si and GaP whiskers, Inorg. Mater., 2008, vol. 44, no. 10, pp. 1033–1040.

    Article  Google Scholar 

  6. Nebol’sin, V.A., Suyatin, D.B., Zotova, E.V., and Shmakova, C.C., Metal solvent droplet stability in silicon whisker growth, Inorg. Mater., 2012, vol. 48, no. 9, pp. 861–866.

    Article  Google Scholar 

  7. Nebol’sin, V.A. and Shchetinin, A.A., Role of surface energy in the vapor–liquid–solid growth of silicon, Inorg. Mater., 2003, vol. 39, no. 9, pp. 899–903.

    Article  Google Scholar 

  8. Nebol’sin, V.A., Dunaev, A.I., and Zavalishin, M.A., Effect of the line tension at the vapor–liquid–solid boundary on the growth of silicon nanocrystals, Inorg. Mater., 2008, vol. 44, no. 6, pp. 559–562.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Voronezh State Technical University, Moskovskii pr. 14, Voronezh, 394026, Russia

    V. A. Nebol’sin, M. A. Zavalishin, S. S. Shmakova, V. P. Gorshunova & A. Yu. Vorob’ev

  2. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, 119992, Russia

    D. B. Suyatin

Authors
  1. V. A. Nebol’sin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. D. B. Suyatin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. A. Zavalishin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. S. Shmakova
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. V. P. Gorshunova
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. A. Yu. Vorob’ev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to V. A. Nebol’sin.

Additional information

Original Russian Text © V.A. Nebol’sin, D.B. Suyatin, M.A. Zavalishin, S.S. Shmakova, V.P. Gorshunova, A.Yu. Vorob’ev, 2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 7, pp. 699–704.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Nebol’sin, V.A., Suyatin, D.B., Zavalishin, M.A. et al. Growth of planar silicon whiskers via temperature gradient driven melt droplet migration. Inorg Mater 51, 635–640 (2015). https://doi.org/10.1134/S0020168515060102

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0020168515060102

Keywords

Search

Navigation