Physics of the Solid State

, Volume 47, Issue 9, pp 1618–1625

Electronic energy structure and x-ray spectra of wide-gap AlN and BN crystals and BxAl1−xN solid solutions

  • V. V. Ilyasov
  • T. P. Zhdanova
  • I. Ya. Nikiforov
Semiconductors and Dielectrics

DOI: 10.1134/1.2045343

Cite this article as:
Ilyasov, V.V., Zhdanova, T.P. & Nikiforov, I.Y. Phys. Solid State (2005) 47: 1618. doi:10.1134/1.2045343

Abstract

The electronic energy structure of 2H and 3C AlN and BN crystals and BxAl1−xN solid solutions is calculated on the basis of the local coherent potential method using the cluster version of the MT approximation and the theory of multiple scattering. The features of the electronic structure of 2H-AlN crystals are compared with x-ray K and L absorption and emission spectra of aluminum and nitrogen. An interpretation of these features is given. The concentration dependences of the width of the upper subband of the valence band and the band gap in BxAl1−xN solid solutions (x = 0.25, 0.5, 0.75) are investigated. Charge transfer from aluminum to nitrogen atoms is shown to occur and increase with boron doping in both crystallographic modifications.

Copyright information

© Pleiades Publishing, Inc. 2005

Authors and Affiliations

  • V. V. Ilyasov
    • 1
  • T. P. Zhdanova
    • 1
  • I. Ya. Nikiforov
    • 1
  1. 1.Don State Technical UniversityRostov-on-DonRussia