Semiconductors

, Volume 39, Issue 8, pp 960–962

The boson peak in Raman spectra of AsxS1−x glasses

  • D. Arsova
  • Y. C. Boulmetis
  • C. Raptis
  • V. Pamukchieva
  • E. Skordeva
Conference. Amorphous, Vitreous, and Porous Semiconductors

DOI: 10.1134/1.2010693

Cite this article as:
Arsova, D., Boulmetis, Y.C., Raptis, C. et al. Semiconductors (2005) 39: 960. doi:10.1134/1.2010693

Abstract

The Raman spectra of AsxS1−x glasses with x < 40 at % (Z < 2.4) have been studied in a wide temperature range (20–300 K). A well resolved boson peak is observed in the low-frequency portion of the spectrum, not withstanding the appearance of floppy modes in the glasses under study. It is shown that the boson peak is characterized by two parameters: intensity and the peak position. A comparison of the intensity variation for the boson peaks indicates that the degree of disorder increases as x decreases. This effect is caused by floppy modes in the glass network and by sulfur phase separation. Studies of reduced boson peaks in the Raman spectra of AsxS1−x glasses confirms the theoretical assumption that the shape of the peaks is independent of composition and temperature.

Copyright information

© Pleiades Publishing, Inc. 2005

Authors and Affiliations

  • D. Arsova
    • 1
  • Y. C. Boulmetis
    • 2
  • C. Raptis
    • 2
  • V. Pamukchieva
    • 1
  • E. Skordeva
    • 1
  1. 1.Institute of Solid-State PhysicsBulgarian Academy of SciencesSofiaBulgaria
  2. 2.Department of PhysicsNational Technical University of AthensAthensGreece