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Optical spectroscopy of excitonic states in zinc diarsenide

  • Atomic Structure and Non-Electric Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.)
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Abstract

The luminescence and transmission of zinc diarsenide single crystals near the fundamental absorption edge have been investigated in the temperature range 4.2–300 K. Intense luminescence and absorption lines at 1.0384, 1.0488, and 1.0507 eV, referring to the ground state (n=1) and excited states (n=2, n=3) of a free exciton were observed at low temperatures. The free-exciton binding energy was found to be ∼13.9 meV on the basis of the hydrogen-like model and the direct band gap was found to be 1.0523, 1.0459, and 0.9795 eV at 4.2, 78, and 300 K, respectively.

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Authors and Affiliations

  1. Institute of Solid-State and Semiconductor Physics, Bellorussian Academy of Sciences, 220072, Minsk, Belarus

    A. V. Mudryi, V. M. Trukhan, A. I. Patuk, I. A. Shakin & S. F. Marenkin

Authors
  1. A. V. Mudryi
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  2. V. M. Trukhan
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  3. A. I. Patuk
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  4. I. A. Shakin
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  5. S. F. Marenkin
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Fiz. Tekh. Poluprovodn. 31, 1029–1032 (September 1997)

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Mudryi, A.V., Trukhan, V.M., Patuk, A.I. et al. Optical spectroscopy of excitonic states in zinc diarsenide. Semiconductors 31, 879–881 (1997). https://doi.org/10.1134/1.1187147

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  • DOI: https://doi.org/10.1134/1.1187147

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