Skip to main content
SpringerLink
Log in

Simulation of the impact of heavy charged particles on the characteristics of field-effect silicon-on-insulator transistors

  • Physical Processes in Electron Devices
  • Published:
Journal of Communications Technology and Electronics Aims and scope Submit manuscript

Abstract

A technique for numerical simulation of variation in the drain current in a silicon-on-insulator field-effect transistor with indirect gate caused by the impact of a heavy charged particle is discussed. The SRIM software and the Synopsys TCAD Sentaurus software suite for process and device simulation are used for simulation. The obtained results are used for formulation of the guidelines on selection of the transistor geometry are formulated based on.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J. M. Hutson, PhD Thesis (Vanderbilt Univ., Nashville, 2008).

    Google Scholar 

  2. S. A. Morozov and S. A. Sokolov, Sb. Nauch. Tr. NIISI RAN 1 (2), 47 (2011).

    Google Scholar 

  3. O. A. Amusan, Master Sci. Thesis (Vanderbilt Univ., Nashville, 2006).

    Google Scholar 

  4. J. R. Schwank, M. R. Shaneyfelt, and P. E. Dodd, Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance (Document SAND-2008-6851P, Albuquerque: Sandia Nat. Lab., 2008).

    Google Scholar 

  5. M. Varadharadjaperumal, IEEE Trans. Nucl. Sci. 51, 3298 (2004).

    Article  Google Scholar 

  6. A. K. Sutton, PhD Thesis (Georgia Inst. Technol., Atlanta, 2009).

    Google Scholar 

  7. G. I. Zebrev, Russ. Microelectron. 35, 177 (2006).

    Article  Google Scholar 

  8. F. Faccio and G. Cervelli, IEEE Trans. Nucl. Sci. 52, 2413 (2005).

    Article  Google Scholar 

  9. J.-P. Colinge, Sol. Stat. Electron. 48, 897 (2004).

    Article  Google Scholar 

  10. A. A. Glushko and V. A. Shakhnov, Russ. Microelectron. 41, 71 (2012).

    Article  Google Scholar 

  11. Sentaurus Device User Guide. Version G-2012.06 (Synopsys, Mountain View, 2012).

  12. J. Ziegler, Particle Interactions with Matter (Website) www.srim.org.

  13. A. Giraldo, A. Paccagnella, and A. Minzoni, Sol. Stat. Electron. 44, 981 (2000).

    Article  Google Scholar 

  14. V. Verstov, V. Shakhnov, and L. Zinchenko, Technological Innovation for Collective Awareness System, Ed. by L. M. Camarinha-Matos, N. S. Barrento, and R. Mendonça in Ser. IFIP: Advances in Information and Communication Technology (Springer-Verlag, Berlin, 2014), Vol. 423, p. 543.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Bauman State Technical University, Vtoraya Baumanskaya ul. 5, Moscow, 105005, Russia

    A. A. Glushko, L. A. Zinchenko & V. A. Shakhnov

Authors
  1. A. A. Glushko
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. L. A. Zinchenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. A. Shakhnov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. A. Glushko.

Additional information

Original Russian Text © A.A. Glushko, L.A. Zinchenko, V.A. Shakhnov, 2015, published in Radiotekhnika i Elektronika, 2015, Vol. 60, No. 10, pp. 1090–1096.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Glushko, A.A., Zinchenko, L.A. & Shakhnov, V.A. Simulation of the impact of heavy charged particles on the characteristics of field-effect silicon-on-insulator transistors. J. Commun. Technol. Electron. 60, 1134–1140 (2015). https://doi.org/10.1134/S1064226915070074

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1064226915070074

Keywords

Search

Navigation