Structural characterization of AlGaN/GaN superlattices by three-beam X-ray diffraction
- R. N. Kyutt
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Three-beam X-ray diffraction in AlGaN/GaN superlattices (SLs) grown by metalorganic chemical vapor deposition on c-sapphire has been measured in the Renninger scheme. The primary beam corresponds to a forbidden 0001 reflection. Then, θ-scan curves were measured at the maximum of each three-beam diffraction peak. The average parameters a and c of SLs have been determined using the angular positions of three-beam diffraction peaks on the Renninger diagram (φ-scan curves). It is shown that a diffraction pattern with satellites on the θ-2θ curve of 0001 reflection can be obtained in the azimuthal position of three-beam diffraction. The angular widths of three-beam diffraction peaks measured in both φ and θ scans have been analyzed as related to the defect structure of layers. On this basis, a new method of determining the structural parameters of SLs is proposed.
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- Structural characterization of AlGaN/GaN superlattices by three-beam X-ray diffraction
Technical Physics Letters
Volume 38, Issue 1 , pp 38-41
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- SP MAIK Nauka/Interperiodica
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- R. N. Kyutt (1)
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- 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia