Technical Physics Letters

, Volume 36, Issue 1, pp 4–6

On the possibility of growth quantum dot arrays in InAs/GaAs system by droplet epitaxy under MOVPE conditions

  • R. Kh. Akchurin
  • I. A. Boginskaya
  • N. T. Vagapova
  • A. A. Marmalyuk
  • A. A. Panin
Article

DOI: 10.1134/S1063785010010025

Cite this article as:
Akchurin, R.K., Boginskaya, I.A., Vagapova, N.T. et al. Tech. Phys. Lett. (2010) 36: 4. doi:10.1134/S1063785010010025

Abstract

We have experimentally studied the possibility of obtaining InAs quantum dot arrays on GaAs(100) substrates by droplet-island growth under low-temperature (160–360°C) metalorganic vapor phase epitaxy (MOVPE) conditions. It is established that trimethylindium (In source) exhibits decomposition even at the lower boundary of the indicated temperature interval. The height of In drops formed on the substrate surface was 3–12 nm with a density of ∼(0.4−1.4) × 109 cm−2 depending on the H-MOVPE conditions. In order to retain the dimensions of InAs nanocrystals formed at the subsequent stage, the process should be carried out at an increased rate of arsine supply.

Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  • R. Kh. Akchurin
    • 1
    • 2
  • I. A. Boginskaya
    • 1
    • 2
  • N. T. Vagapova
    • 1
    • 2
  • A. A. Marmalyuk
    • 1
    • 2
  • A. A. Panin
    • 1
    • 2
  1. 1.Lomonosov State Academy of Fine Chemical TechnologyMoscowRussia
  2. 2.Sigm Plus CompanyMoscowRussia