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Generation of π modes in semiconductor vertical-cavity surface-emitting lasers

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Abstract

We have theoretically and experimentally studied optical emission from the side faces of mesa structures for vertical-cavity surface-emitting lasers (VCSELs). The results of spatially resolved spectral measurements show that a new type of lasing modes is found in VCSELs with circular mesa structures, which corresponds to the π mode propagation along the mesa diameter with reflection from the sloped walls and the bottom Bragg mirror.

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Correspondence to G. S. Sokolovskii.

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Original Russian Text © G.S. Sokolovskii, V.V. Dudelev, A.M. Monakhov, A.Yu. Savenko, S.A. Blokhin, A.G. Deryagin, S.A. Zolotovskaya, A.G. Kuzmenkov, S.N. Losev, V.V. Luchinin, N.A. Maleev, E.U. Rafailov, W. Sibbett, V.I. Kuchinskii, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 24, pp. 20–27.

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Sokolovskii, G.S., Dudelev, V.V., Monakhov, A.M. et al. Generation of π modes in semiconductor vertical-cavity surface-emitting lasers. Tech. Phys. Lett. 35, 1133–1136 (2009). https://doi.org/10.1134/S1063785009120189

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  • DOI: https://doi.org/10.1134/S1063785009120189

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