, Volume 35, Issue 7, pp 585-588
Date: 31 Jul 2009

Influence of metal-ferroelectric contacts on the space charge formation in ferroelectric thin film capacitors

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Abstract

We have studied the response speed characteristics of capacitor structures based on thin Ba0.3Sr0.7TiO3 (BSTO) films with metal-ferroelectric contacts of various types formed under different conditions. It is established that threshold voltages exist for the appearance of a residual space charge in some structures. A comparative analysis of the technological features of contact formation and experimental data on the characteristics of samples leads to the conclusion that, by forming Pt-BSTO contacts in an oxygen-containing atmosphere, it is possible to suppress the injection of carriers into the ferroelectric film in the capacitor structure.

Original Russian Text © A.B. Kozyrev, M.M. Gaĭdukov, A.G. Gagarin, A.G. Altynnikov, S.V. Razumov, A.V. Tumarkin, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 13, pp. 1–7.