High-temperature diffusion doping of porous silicon carbide
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- Mynbaeva, M.G., Mokhov, E.N., Lavrent’ev, A.A. et al. Tech. Phys. Lett. (2008) 34: 731. doi:10.1134/S1063785008090034
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The results of experiments on high-temperature (2000–2200°C) diffusion doping of porous silicon carbide (PSC) by vanadium and erbium are reported. It is established that the specific features of diffusion processes in PSC at these temperatures are determined by modification of the porous structure due to the transport of vacancies. Based on a comparison of these results to available data on the low-temperature (900–1000°C) diffusion, it is concluded that the mechanisms of diffusion in PSC at low and high temperatures are different and that SiC with a porous structure is an effective medium particularly for low-temperature diffusion.