Technical Physics

, Volume 52, Issue 5, pp 636–641

Extension of the temperature range of epitaxial YSZ film growth on Si(100) during magnetron sputtering

  • V. G. Beshenkov
  • A. G. Znamenskii
  • V. A. Marchenko
  • A. N. Pustovit
  • A. V. Chernykh
Experimental Instruments and Techniques

DOI: 10.1134/S1063784207050167

Cite this article as:
Beshenkov, V.G., Znamenskii, A.G., Marchenko, V.A. et al. Tech. Phys. (2007) 52: 636. doi:10.1134/S1063784207050167

Abstract

The temperature range of epitaxial YSZ film growth on silicon with natural oxide, which is narrow (≈20°C) under conventional magnetron sputtering conditions, is experimentally shown to be extended to 150°C due to a decrease in the lower boundary when the film surface is irradiated by ions from the plasma adjacent to the substrate. The required ion energy is E ≥ 80 eV. Current passage in the plasma-film-substrate circuit is accompanied by oxygen ion transport to the YSZ film and leads to the formation of specific defects in it. Defect-free atomically smooth epitaxial films can be grown over wide temperature and ion-energy ranges during ion irradiation with a zero time-averaged current through the film that is caused by an HF bias voltage applied to an insulated substrate.

PACS numbers

81.15.-z

Copyright information

© Pleiades Publishing, Ltd. 2007

Authors and Affiliations

  • V. G. Beshenkov
    • 1
  • A. G. Znamenskii
    • 1
  • V. A. Marchenko
    • 1
  • A. N. Pustovit
    • 1
  • A. V. Chernykh
    • 1
  1. 1.Institute of Microelectronics Technology and High-Purity MaterialsRussian Academy of SciencesChernogolovka, Moscow oblastRussia