Physics of the Solid State

, Volume 52, Issue 7, pp 1531–1538

Surface energy and crystal structure of nanowhiskers of III–V semiconductor compounds

Authors

    • St. Petersburg Academic University—Nanotechnology Research and Education CentreRussian Academy of Sciences
  • M. A. Timofeeva
    • St. Petersburg State Polytechnical University
  • A. D. Bol’shakov
    • St. Petersburg Academic University—Nanotechnology Research and Education CentreRussian Academy of Sciences
  • M. V. Nazarenko
    • St. Petersburg Academic University—Nanotechnology Research and Education CentreRussian Academy of Sciences
  • V. G. Dubrovskiĭ
    • St. Petersburg Academic University—Nanotechnology Research and Education CentreRussian Academy of Sciences
    • Ioffe Physical-Technical InstituteRussian Academy of Sciences
Low-Dimensional Systems and Surface Physics

DOI: 10.1134/S1063783410070309

Cite this article as:
Sibirev, N.V., Timofeeva, M.A., Bol’shakov, A.D. et al. Phys. Solid State (2010) 52: 1531. doi:10.1134/S1063783410070309

Abstract

A theoretical model has been proposed for calculating the surface energy of nanowhiskers in the nearest neighbor approximation. The surface energy has been calculated for different faces of III–V semiconductor crystals with cubic and hexagonal structures. The effect of the formation of the hexagonal wurtzite phase in nanowhiskers of III–V semiconductor compounds has been considered using the obtained data. Estimates for the critical radius of the phase transition in III–V semiconductor nanowhiskers are presented.

Copyright information

© Pleiades Publishing, Ltd. 2010