Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures
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- Gudina, S.V., Arapov, Y.G., Saveliev, A.P. et al. Semiconductors (2016) 50: 1641. doi:10.1134/S1063782616120071
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The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of hopping conductivity in a strongly localized electron system. The analysis of variable-range hopping conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.