Semiconductors

, Volume 50, Issue 7, pp 853–859

Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

  • P. V. Seredin
  • A. V. Fedyukin
  • I. N. Arsentyev
  • L. S. Vavilova
  • I. S. Tarasov
  • T. Prutskij
  • H. Leiste
  • M. Rinke
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

DOI: 10.1134/S106378261607023X

Cite this article as:
Seredin, P.V., Fedyukin, A.V., Arsentyev, I.N. et al. Semiconductors (2016) 50: 853. doi:10.1134/S106378261607023X
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Abstract

The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin (~20–40 μm) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free charge carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.

Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • P. V. Seredin
    • 1
  • A. V. Fedyukin
    • 1
  • I. N. Arsentyev
    • 2
  • L. S. Vavilova
    • 2
  • I. S. Tarasov
    • 2
  • T. Prutskij
    • 3
  • H. Leiste
    • 4
  • M. Rinke
    • 4
  1. 1.Voronezh State UniversityVoronezhRussia
  2. 2.Ioffe Physical–Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  3. 3.Instituto de CienciasBenemérita Universidad Autonoma de PueblaPuebla, Pue.Mexico
  4. 4.Karlsruhe Nano Micro FacilityEggenstein-LeopoldshafenGermany