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Geometrization of the dynamic structure of the transient photoresponse from zinc chalcogenides

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

A geometric approach to revealing the characteristic signs of photoresponse from semiconductor sensor materials is presented. It is shown by the example of zinc chalcogenides that natural decomposition of the transient photoresponse into geometrically ordered components is performed upon transforming their transient photoresponse into first-order and second-order signatures. Universal differential-geometric parameters and other indices, which are also applicable for other characteristics of semiconductor sensor materials, are applied for the system analysis of ordering the dynamic structure of the photoresponse.

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Authors and Affiliations

  1. National Aerospace University “KhAI”, Kharkiv, 61070, Ukraine

    V. P. Mygal, A. V. But, A. S. Phomin & I. A. Klimenko

Authors
  1. V. P. Mygal
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  2. A. V. But
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  3. A. S. Phomin
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  4. I. A. Klimenko
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Correspondence to A. V. But.

Additional information

Original Russian Text © V.P. Mygal, A.V. But, A.S. Phomin, I.A. Klimenko, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 5, pp. 648–651.

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Mygal, V.P., But, A.V., Phomin, A.S. et al. Geometrization of the dynamic structure of the transient photoresponse from zinc chalcogenides. Semiconductors 49, 634–637 (2015). https://doi.org/10.1134/S1063782615050152

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  • DOI: https://doi.org/10.1134/S1063782615050152

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