Effect of nanobridges on the emission spectra of a quantum dot-quantum well tunneling pair
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- Talalaev, V.G., Cirlin, G.E., Goray, L.I. et al. Semiconductors (2014) 48: 1178. doi:10.1134/S1063782614090218
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Emission in the narrow spectral range 950–1000 nm is obtained at the nanobridge optical transition involving experimentally and theoretically observed hybrid states in the InGaAs system, i.e., quantum dot-nanobridge-quantum well. It is experimentally shown that the oscillator strength of the new transition sharply increases in the built-in electric field of a pin junction. In the mode of weak currents in the system under study, the nanobridge transition is the dominant electroluminescence channel. At current densities >10 A cm2, nanobridge “burning” is observed, after which the system becomes a “quasi-classical” quantum dot-quantum well tunneling pair separated by a barrier.