Abstract
Emission in the narrow spectral range 950–1000 nm is obtained at the nanobridge optical transition involving experimentally and theoretically observed hybrid states in the InGaAs system, i.e., quantum dot-nanobridge-quantum well. It is experimentally shown that the oscillator strength of the new transition sharply increases in the built-in electric field of a pin junction. In the mode of weak currents in the system under study, the nanobridge transition is the dominant electroluminescence channel. At current densities >10 A cm2, nanobridge “burning” is observed, after which the system becomes a “quasi-classical” quantum dot-quantum well tunneling pair separated by a barrier.
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Original Russian Text © V.G. Talalaev, G.E. Cirlin, L.I. Goray, B.V. Novikov, M.E. Labzovskaya, J.W. Tomm, P. Werner, B. Fuhrmann, J. Schilling, P.N. Racec, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 9, pp. 1209–1216.
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Talalaev, V.G., Cirlin, G.E., Goray, L.I. et al. Effect of nanobridges on the emission spectra of a quantum dot-quantum well tunneling pair. Semiconductors 48, 1178–1184 (2014). https://doi.org/10.1134/S1063782614090218
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DOI: https://doi.org/10.1134/S1063782614090218