Semiconductors

, Volume 46, Issue 11, pp 1358–1361

Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers

Authors

    • Institute of Physics of MicrostructuresRussian Academy of Sciences
  • A. V. Novikov
    • Institute of Physics of MicrostructuresRussian Academy of Sciences
  • V. I. Shashkin
    • Institute of Physics of MicrostructuresRussian Academy of Sciences
  • D. V. Yurasov
    • Institute of Physics of MicrostructuresRussian Academy of Sciences
XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012

DOI: 10.1134/S1063782612110140

Cite this article as:
Murel, A.V., Novikov, A.V., Shashkin, V.I. et al. Semiconductors (2012) 46: 1358. doi:10.1134/S1063782612110140

Abstract

The possibility of controlling the effective barrier height in Schottky diodes based on silicon structures grown by the molecular-beam-epitaxy method is experimentally investigated. It is shown that control of the effective barrier height is possible both when using heavily doped surface homogeneous (3D) layers (∼1020 cm−3) and surface (2D) δ layers (∼1013 cm−2), which provide tunnel transmission of the current through the barrier on the metal-semiconductor interface. The dependences of the effective barrier height on the parameters of the heavily doped layers are investigated. The performed simulation of electron transport in the structures makes it possible to qualitatively explain the observed experimental results.

Copyright information

© Pleiades Publishing, Ltd. 2012