Semiconductors

, Volume 46, Issue 11, pp 1415–1417

Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots

Authors

  • A. V. Antonov
    • Institute for Physics of MicrostructuresRussian Academy of Sciences
  • V. M. Daniltsev
    • Institute for Physics of MicrostructuresRussian Academy of Sciences
  • M. N. Drozdov
    • Institute for Physics of MicrostructuresRussian Academy of Sciences
  • Yu. N. Drozdov
    • Institute for Physics of MicrostructuresRussian Academy of Sciences
    • Institute for Physics of MicrostructuresRussian Academy of Sciences
  • V. I. Shashkin
    • Institute for Physics of MicrostructuresRussian Academy of Sciences
XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012

DOI: 10.1134/S1063782612110048

Cite this article as:
Antonov, A.V., Daniltsev, V.M., Drozdov, M.N. et al. Semiconductors (2012) 46: 1415. doi:10.1134/S1063782612110048

Abstract

The effect of lateral intraband photoconductivity in undoped InAs/GaAs heterostructures with quantum dots (QDs) has been studied, with QD levels populated with carriers by means of interband optical excitation of varied power at different wavelengths. In the absence of interband illumination, no photoconductivity is observed in the mid-IR spectral range. At the same time, additional exposure of the structures to visible or near-IR light gives rise to a strong photoconductivity signal in the mid-IR spectral range (3–5 μm), associated with intraband transitions in QDs. The signal is observed up to a temperature of ∼200 K. Use of interband optical pumping makes the intraband photoconductivity signal stronger, compared with similar structures in which doping serves to populate QD levels.

Copyright information

© Pleiades Publishing, Ltd. 2012